Resistive Switching Behavior in Organic–Inorganic Hybrid CH3NH3PbI3−xClx Perovskite for Resistive Random Access Memory Devices

Eun Ji Yoo, Miaoqiang Lyu, Jung-Ho Yun, Chi Jung Kang, young Jin Choi*, and Lianzhou Wang*

Abstract: The CH3NH3PbI3−xClx organic–inorganic hybrid perovskite material demonstrates remarkable resistive switching behavior, which can be applicable in resistive random access memory devices. The simply designed Au/CH3NH3PbI3−xClx/FTO structure is fabricated by a low-temperature, solution-processable method, which exhibits remarkable bipolar resistive switching and nonvolatile properties.

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